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At temperature 300 K number density of e...

At temperature 300 K number density of electrons and holes in pure silicon is `1.5xx10^(16)m^(-3)`. The number density of hole increase by `4.5xx10^(22)m^(-3)` dopping the indium impurity so calculate number denstiy of electron.

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At thermal equilibrium `n_(e)n_(h)=n_(1)^(2)=n_(1)^(2) rArr n_(e)=(n_(i)^(2))/(n_(e))=((1.5 xx10^(16)))/(4.5 xx 10^(22))=5 xx 10^(9)m^(-3)`.
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ALLEN -SEMICONDUCTORS-Part-3(Exercise-4)
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  2. At absolute zero temperature Si acts as ……..

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  3. The energy band gap is maximum in …….

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  4. The part of a transistor which is most heavily doped to produce large ...

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  5. A piece of copper and another of germanium are cooled from room temper...

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  6. The difference in the variation of resistance with temperature in a me...

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  7. In the middle of the electron layer of a reverse biased p-n junction, ...

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  8. Consider telecommunication through optical fibres. Which of the follow...

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  9. When npn transistor is used as an amplifler

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  10. For a transistor ampliflier in common emiter configuration for load im...

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  11. A piece of copper and another of germanium are cooled from room temper...

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  12. When p-n junction diode is forward biased ………

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  13. The electrical conductivity of a semiconductor of a semiconductor incr...

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  14. In a common emitter amplifier circuit using a n-p-n transistor, the ph...

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  15. In a full wave rectifier circuit operating from 50 Hz mains frequency...

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  16. In a common base mode of a transition , the collector current is 5.48...

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  17. A solid which is transparent to visible light an whose conductivity in...

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  18. Ratio of number density of holes is (7)/(5) and ratio of their current...

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  19. The circuit has two oppsitely ideal diodes in parallel. What is the cu...

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  20. In the following, which one of the diodes is reverse biased ?

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  21. If the lattice constant of this semiconductor is decreased, then which...

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