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The forbidden energy gap in Ge is :-...

The forbidden energy gap in Ge is :-

A

0.72 eV

B

0.072 eV

C

7.2 eV

D

0.0072 eV

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The correct Answer is:
A
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ALLEN -SEMICONDUCTORS-Part-3(Exercise-1)
  1. Let n(p) and n(e) be the number of holes and conduction electrons resp...

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  2. Resistivity of a semiconductor depends on

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  3. The forbidden energy gap in Ge is :-

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  4. The energy gap in a semiconductor is of the order of :-

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  5. A p-type semiconductor is

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  6. The depletion region of a p-n junction contains :-

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  7. The p-n junction is a :-

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  8. When value of current increase in P-N junction, then the value of cont...

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  9. p-n junction is called as forward biased when

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  10. When a junction diode is reverse biased, then current called drift cur...

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  11. The thinest part of a transistor is

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  12. In transistor symbols, the arrows shows the direction of-

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  13. Transistor can be used as :-

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  14. A device whose one end is connected to -ve terminal and other end conn...

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  15. A common emitter circuit is used as an amplifier, its current gain is ...

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  16. In which case is the junction diode is not reverse bias-

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  17. For transistor relation in current amplification factors is-

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  18. In a full wave rectifier if input freq, is 50 Hz then output nipple fr...

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  19. What is the ratio of forward and reverse resistance of p-n junction di...

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  20. Increasing forward voltage in diode, the width of depletion layer is …...

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