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The difference in the variation of resis...

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the ……….

A

crystal structure

B

variation of the number of charge carries with temperature

C

type of bonding

D

variation of scattering mechanism with temperature

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The correct Answer is:
B
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ALLEN -SEMICONDUCTORS-Part-3(Exercise-4)
  1. The part of a transistor which is most heavily doped to produce large ...

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  2. A piece of copper and another of germanium are cooled from room temper...

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  3. The difference in the variation of resistance with temperature in a me...

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  4. In the middle of the electron layer of a reverse biased p-n junction, ...

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  5. Consider telecommunication through optical fibres. Which of the follow...

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  6. When npn transistor is used as an amplifler

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  7. For a transistor ampliflier in common emiter configuration for load im...

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  8. A piece of copper and another of germanium are cooled from room temper...

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  9. When p-n junction diode is forward biased ………

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  10. The electrical conductivity of a semiconductor of a semiconductor incr...

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  11. In a common emitter amplifier circuit using a n-p-n transistor, the ph...

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  12. In a full wave rectifier circuit operating from 50 Hz mains frequency...

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  13. In a common base mode of a transition , the collector current is 5.48...

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  14. A solid which is transparent to visible light an whose conductivity in...

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  15. Ratio of number density of holes is (7)/(5) and ratio of their current...

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  16. The circuit has two oppsitely ideal diodes in parallel. What is the cu...

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  17. In the following, which one of the diodes is reverse biased ?

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  18. If the lattice constant of this semiconductor is decreased, then which...

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  19. Carbon, silicon and germanium have four valence electrons each. At roo...

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  20. If a p-n junction diode, a square input signal of 10 V is applied as s...

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