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A semiconductor having electron and line...

A semiconductor having electron and linear mobilities `mu_(n)` and `mu_(p)` respectively.
If its intrinsic carrier density is `n_(i)`, then what will be the value of hole concentration `P` for which the conductivity will be maximum at a given temperature?

A

`n_("i")sqrt((mu_(n))/(mu_(p)))`

B

`n_(h)sqrt((mu_(n))/(mu_(p)))`

C

`n_("i")sqrt((mu_(p))/(mu_(p)))`

D

`n_(h)sqrt((mu_(p))/(mu_(n)))`

Text Solution

AI Generated Solution

The correct Answer is:
To solve the problem of finding the hole concentration \( P \) for which the conductivity of a semiconductor is maximized, we can follow these steps: ### Step 1: Understand the Conductivity Formula The total conductivity \( \sigma \) of a semiconductor is given by the equation: \[ \sigma = n_e \cdot e \cdot \mu_n + n_p \cdot e \cdot \mu_p \] where: - \( n_e \) is the electron concentration, - \( n_p \) is the hole concentration, - \( e \) is the charge of an electron, - \( \mu_n \) is the electron mobility, - \( \mu_p \) is the hole mobility. ### Step 2: Relate Electron and Hole Concentrations For an intrinsic semiconductor, the relationship between the intrinsic carrier density \( n_i \), the electron concentration \( n_e \), and the hole concentration \( n_p \) is given by: \[ n_i^2 = n_e \cdot n_p \] From this relation, we can express the electron concentration in terms of the hole concentration: \[ n_e = \frac{n_i^2}{n_p} \] ### Step 3: Substitute Electron Concentration into Conductivity Substituting \( n_e \) into the conductivity equation, we have: \[ \sigma = \left(\frac{n_i^2}{n_p}\right) \cdot e \cdot \mu_n + n_p \cdot e \cdot \mu_p \] Factoring out \( e \), we get: \[ \sigma = e \left(\frac{n_i^2 \mu_n}{n_p} + n_p \mu_p\right) \] ### Step 4: Maximize the Conductivity To find the hole concentration \( n_p \) that maximizes conductivity, we need to differentiate \( \sigma \) with respect to \( n_p \) and set the derivative equal to zero: \[ \frac{d\sigma}{dn_p} = e \left(-\frac{n_i^2 \mu_n}{n_p^2} + \mu_p\right) = 0 \] This leads to: \[ -\frac{n_i^2 \mu_n}{n_p^2} + \mu_p = 0 \] ### Step 5: Solve for Hole Concentration Rearranging the equation gives: \[ \frac{n_i^2 \mu_n}{n_p^2} = \mu_p \] Multiplying both sides by \( n_p^2 \) and rearranging yields: \[ n_p^2 = \frac{n_i^2 \mu_n}{\mu_p} \] Taking the square root of both sides gives: \[ n_p = n_i \sqrt{\frac{\mu_n}{\mu_p}} \] ### Step 6: Final Result Since the question denotes the hole concentration as \( P \), we can write: \[ P = n_i \sqrt{\frac{\mu_n}{\mu_p}} \] ### Conclusion Thus, the value of hole concentration \( P \) for which the conductivity will be maximum at a given temperature is: \[ P = n_i \sqrt{\frac{\mu_n}{\mu_p}} \]
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