Pure Si at 500 K has equal number of electron `(n_(e))` and hole `(n_(h))` concentration of `1.5xx10^(16) m^(-3)`. Doping by indium increases `n_(h)` to `4.5xx10^(22) m^(-3)`. The doped semiconductor is of :

Explanation

`n_(e)=(n_(1)^(2))/(n_(h))=((1.5xx10^(16))^(2))/((4.5xx10^(22)))=5xx10^(9)m^(-3)`