Home
Class 11
PHYSICS
The forbidden energy gap in Ge is 0.72 e...

The forbidden energy gap in Ge is 0.72 eV , given `hc = 12440 eVÅ` - The maximum wavelength of radiation that will generate electron hole pair is

A

0.72 eV

B

0.072 eV

C

7.2 eV

D

0.0072 eV

Text Solution

Verified by Experts

The correct Answer is:
A
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTORS

    ALLEN|Exercise Part-3(Exercise-2)|49 Videos

  • SEMICONDUCTORS

    ALLEN|Exercise Part-3(Exercise-3)|27 Videos

  • SEMICONDUCTORS

    ALLEN|Exercise Part-3(Exercise-4)|51 Videos

  • PHYSICAL WORLD, UNITS AND DIMENSIONS & ERRORS IN MEASUREMENT

    ALLEN|Exercise EXERCISE-IV|8 Videos

  • WAVES AND OSCILLATIONS

    ALLEN|Exercise Part-1(Exercise-05)[B]|42 Videos

Similar Questions

Explore conceptually related problems

Forbidden energy gap of Ge is 0.75eV , maximum wave length of incident radiation for producing electron-gole pair in germanium semiconductor is

The energy gap of silicon is 1.14 eV . The maximum wavelength at which silicon will begin absorbing energy is

The collector of the photocell (in photoelectric experiment ) is made of tungsten while the emitter is Platinum having work function of 10 eV .Monochromatic radiation of wavelength 124 Å & power 100 watt is incident on emitter which emits photo electrons with a quantum efficiency of 1% .The accelerating voltage acros the photocell is of 10,000 volts (Use: hc=12400eV Å ) The minimum wavelength of radiation coming from the tungsten target (collector) is

(i) Explain the statement: "Work function of a certain metal is 2.0 eV." (ii) Calculate the maximum wavelength of the electro-magnetic radiation which will cause emission of photoelectrons from this metal.

The work function of a metal is 3.4 eV. A light of wavelength 3000Å is incident on it. The maximum kinetic energy of the ejected electron will be :

A photodetector is made from a compound semiconductor with band gap 0.73eV. The maximum wavelength it can detect is

A photodetector is made from a compound semiconductor with band gap 0.73eV. The maximum wavelength it can detect is

Electrons of energy 12.09 eV can excite hydrogen atoms . To which orbit is the electron in the hydrogen atom raisd and what are the wavelengths of the radiations emitted as it dropes back to the ground state?

The band gap between the valence and the conduction bands in zinc oxide (ZnO) is 3.0eV.Suppose an electron in the conduction band combines with a hole in the valence band and the excess energy is released in the form of electromagnetic radiation .Find the maximum wavelength that can be emitted in this process.

The ionization enegry of the electron in the hydrogen atom in its ground state is 13.6 ev . The atoms are excited to higher energy levels to emit radiations of 6 wavelengths. Maximum wavelength of emitted radiation corresponds to the transition between

ALLEN-SEMICONDUCTORS-Part-3(Exercise-1)
  1. Lets npand ne be the number of holes and conduction electrons in an in...

    Text Solution

    |

  2. Resistivity of a semiconductor depends on

    Text Solution

    |

  3. The forbidden energy gap in Ge is 0.72 eV , given hc = 12440 eVÅ - Th...

    Text Solution

    |

  4. The energy gap in a semiconductor is of the order of :-

    Text Solution

    |

  5. A p-type semiconductor is

    Text Solution

    |

  6. In the depletion region of an unbiased p-n junction diode there are

    Text Solution

    |

  7. p-n junction is

    Text Solution

    |

  8. When value of current increase in P-N junction, then the value of cont...

    Text Solution

    |

  9. p-n junction is said to be forward biased, when

    Text Solution

    |

  10. When a junction diode is reverse biased, then current called drift cur...

    Text Solution

    |

  11. The thinest part of a transistor is

    Text Solution

    |

  12. In transistor symbols, the arrows shows the direction of-

    Text Solution

    |

  13. Transistor can be used as :-

    Text Solution

    |

  14. One part of a device is connected with the negative terminal of a batt...

    Text Solution

    |

  15. Common emitter circuit is used as amplifier, its current gain is 50. I...

    Text Solution

    |

  16. In which case is the junction diode is not reverse bias-

    Text Solution

    |

  17. For transistor relation in current amplification factors is-

    Text Solution

    |

  18. If a full wave rectifier circuit is operating from 50 Hz mains, the fu...

    Text Solution

    |

  19. The ratio fo resistance for forward to reverse bias of P-N junction di...

    Text Solution

    |

  20. If the forward voltage in a diode is increased, the width of the deple...

    Text Solution

    |