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In a N-P-N transistor circuit, the colle...

In a N-P-N transistor circuit, the collector current is 10 mA.If 90 % of the electron emitted reach the collector, the emitter current `(I_(E))` and base current `(I_(B))` are given by -

A

`I_(E) = 1mA , I_(B) = 11 mA`

B

`I_(E) = 11 mA l I_(B) = 1mA`

C

`I_(E) = -1mA , I_(B) = 9mA`

D

`I_(E) = 9mA , I_(B) = -1 mA`

Text Solution

Verified by Experts

The correct Answer is:
B

`I_(C)=90%I_(E)=(90)/(100)I_(E)rArr I_(E)=(100)/(90)xxI_(C)=11mA`
`I_(B)=I_(E)-I_(C)=11mA-10mA=1mA`.
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ALLEN-SEMICONDUCTORS-Part-3(Exercise-1)
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  2. If the forward voltage in a diode is increased, the width of the deple...

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  5. For pure ''Ge'' semiconductor quantity of ''e'' and hole is 10^(19) e...

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  6. When a p-n junction diode is reverse biased, then

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  7. In a p-n junction having depletion layer of thickness 10^(-6) m , the ...

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  8. A Ge specimen is doped with Al. The concentration of electron - hole p...

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  9. Assuming that the junction diode is ideal the current through the diod...

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  10. When two semiconductor of p and n type are brought in to contact, they...

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  11. In a forward biased PN- junction diode, the potential barrier in the d...

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  12. For a common base configuration of PNP transistor (l(C))/(l(E))=0.98, ...

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