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For pure ''Ge'' semiconductor quantity o...

For pure ''Ge'' semiconductor quantity of ''e'' and hole is `10^(19) e//m^(3)` if we doped donor impurity in it with density `10^(23) e//m^(3)` then quantity of hole `(e//m^(3))` in semiconductor is :-

A

`10^(15)`

B

`10^(19)`

C

`10^(23)`

D

`10^(27)`

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The correct Answer is:
To solve the problem, we need to determine the quantity of holes in a doped germanium (Ge) semiconductor after adding donor impurities. ### Step-by-Step Solution: 1. **Identify Given Values:** - For pure germanium, the concentration of electrons (n) and holes (p) is given as: \[ n = p = 10^{19} \, \text{m}^{-3} \] - The concentration of donor impurities (N_d) is given as: \[ N_d = 10^{23} \, \text{m}^{-3} \] 2. **Understand the Effect of Doping:** - When donor impurities are added to a semiconductor, they contribute additional electrons to the conduction band. This increases the electron concentration (n) and decreases the hole concentration (p) due to the charge neutrality condition. 3. **Apply Charge Neutrality Condition:** - In a doped semiconductor, the relationship between electrons (n), holes (p), and donor concentration (N_d) can be expressed as: \[ n \cdot p = n_i^2 \] - Where \( n_i \) is the intrinsic carrier concentration. For germanium, we can assume \( n_i \) is approximately \( 10^{19} \, \text{m}^{-3} \). 4. **Calculate New Electron Concentration:** - After doping, the new electron concentration (n') can be approximated as: \[ n' = n + N_d = 10^{19} + 10^{23} \approx 10^{23} \, \text{m}^{-3} \] - (Since \( 10^{23} \) is much larger than \( 10^{19} \), we can ignore \( 10^{19} \) in this case.) 5. **Use the Charge Neutrality Condition to Find Holes:** - Now, substituting the values into the equation: \[ n' \cdot p' = n_i^2 \] - Rearranging gives us: \[ p' = \frac{n_i^2}{n'} \] - Substituting \( n_i = 10^{19} \, \text{m}^{-3} \) and \( n' = 10^{23} \, \text{m}^{-3} \): \[ p' = \frac{(10^{19})^2}{10^{23}} = \frac{10^{38}}{10^{23}} = 10^{15} \, \text{m}^{-3} \] 6. **Conclusion:** - The quantity of holes in the doped germanium semiconductor is: \[ p' = 10^{15} \, \text{m}^{-3} \] ### Final Answer: The quantity of holes in the doped germanium semiconductor is \( 10^{15} \, \text{m}^{-3} \).

To solve the problem, we need to determine the quantity of holes in a doped germanium (Ge) semiconductor after adding donor impurities. ### Step-by-Step Solution: 1. **Identify Given Values:** - For pure germanium, the concentration of electrons (n) and holes (p) is given as: \[ n = p = 10^{19} \, \text{m}^{-3} ...
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ALLEN-SEMICONDUCTORS-Part-3(Exercise-1)
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