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Forbidden energy gap of Ge is 0.75eV, ma...

Forbidden energy gap of Ge is `0.75eV`, maximum wave length of incident radiation for producing electron-hole pair in germanium semiconductor is

A

`4200 Å`

B

`16500 Å`

C

`4700 Å`

D

`4000 Å`

Text Solution

Verified by Experts

The correct Answer is:
B

`E=(12400(eV-Å))/(lamda(Å))rArrlamda=(12400)/(0.75)=16500 Å`
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ALLEN-SEMICONDUCTORS-Part-3(Exercise-2)
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  2. A diode made forward biased by a two volt battery however there is a d...

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  3. Forbidden energy gap of Ge is 0.75eV, maximum wave length of incident ...

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  4. In figure the input is across the terminals A and C and the output is ...

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  6. In the following common emitter configuration an npn transistor with c...

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  7. In the given transistor circuit, the base current is 35 muA. The value...

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  8. In the circuit shown here, the transistor used has a current gain beta...

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  9. Choose the false statement from the following.

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  10. What will be conductivity of pure sillicon crystal at 300 K temp? if e...

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  11. The output of the given logic gate is 1 when inputs A,B and C are such...

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  12. The arrangement shown in figure performs the logic function of a/an….g...

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  13. You are given two circuits as shown in Fig. 14.38, which consist of NA...

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  14. Which of the following expressions is not true ?

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  15. Which of the following relation is valid in Boolean algebra :-

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  16. Given below are four logic gates symbols. NAND, NOR and OR are respect...

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  17. The output Y of the combination of logic gates shown is equal to

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  18. Which of the following relation is valid in Boolean algebra :-

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  19. The output of given logic circuit is

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  20. The following configuration of gate is equivalent to

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