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The part of the transistor which is heav...

The part of the transistor which is heavily doped to produced large number of majority carriers is

A

emitter

B

base

C

collector

D

can be any of the above three

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The correct Answer is:
A
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ALLEN-SEMICONDUCTORS-Part-3(Exercise-4)
  1. At absolute zero , Si acts as

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  2. The energy band gap is maximum in

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  3. The part of the transistor which is heavily doped to produced large nu...

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  4. A piece of copper and another of germanium are cooled from room temper...

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  5. The difference in the variation of resistance with temperature in a me...

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  6. In the middle of the depletion layer of a reverse-biased p - n junctio...

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  7. Consider telecommunication through optical fibers. Which of the follow...

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  8. When a n-p-n transistor is used as an amplifier, then

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  9. For a transistor ampliflier in common emiter configuration for load im...

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  10. A piece of copper are another fo germanium are cooled from room temper...

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  11. When p-n junction diode is forward biased, then

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  12. The electrical conductivity of a semiconductor increases when electrom...

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  13. In a common base amplifier the phase difference the input signal volta...

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  14. If a full wave rectifier circuit is operating from 50 Hz mains, the fu...

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  15. In a common-base of mode of transistor, the collector current is 5.488...

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  16. A solid which is not transperent to visible light and whose conductivi...

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  17. If the ratio of the concentration of electrons and that of holes in a ...

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  18. The circuit has two oppositely connected ideal diodes in parallel. Wha...

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  19. In the following, which one of the diodes is reverse biased ?

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  20. If the lattice constant of this semiconductor is decreased, then which...

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