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The basic principle underlying the Hall ...

The basic principle underlying the Hall effect is the Lorentz force. When an electron moves along a direction perpendicular to an applied magnetic field, it experiences a force acting normal to both the directions and moves in response to this force and the force exerted by the internal electric field. For an `n`-type, `"bar"`-shaped semiconductor, the carriers are predominantly electrons of bulk density `n`. We assume that the constant current `I` flows along the `x`-axis from left to right in the presence of a magnetic field toward `y`-axis. Electrons subjected to the lorentz force initially drift away from the current line toward the negative `z`-axis, resulting in an excess surface electrical charge on the sides of the sample. This charge results in the hall voltage, a potential drop across the two sides of the sample.
The transverse voltage is the hall voltage `V_(H)` and its magnitude is equal to `IB//qnd`, where `I` is the current, `B` is the magnetic field, `d` is the sample thickness and `q` is the elementary charge. A silver ribbon lies as shown in the adjacent figure. (`z_(1)=11.8 mm` and `y_(1)=0.23 mm`) carrying a current of `120 A` in the `x`-direction in a uniform magnetic field `B=0.95 T`. If electron density is `5.85xx10^(28)//m^(3)`, then
Magnitude of the drift velocity of elelctrons is

A

53 mv

B

`53 mu V`

C

5.3 mV

D

`5.3 mu V`

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B
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The basic principle underlying the Hall effect is the Lorentz force. When an electron moves along a direction perpendicular to an applied magnetic field, it experiences a force acting normal to both the directions and moves in response to this force and the force exerted by the internal electric field. For an n -type, "bar" -shaped semiconductor, the carriers are predominantly electrons of bulk density n . We assume that the constant current I flows along the x -axis from left to right in the presence of a magnetic field toward y -axis. Electrons subjected to the lorentz force initially drift away from the current line toward the negative z -axis, resulting in an excess surface electrical charge on the sides of the sample. This charge results in the hall voltage, a potential drop across the two sides of the sample. The transverse voltage is the hall voltage V_(H) and its magnitude is equal to IB//qnd , where I is the current, B is the magnetic field, d is the sample thickness and q is the elementary charge. A silver ribbon lies as shown in the adjacent figure. ( z_(1)=11.8 mm and y_(1)=0.23 mm ) carrying a current of 120 A in the x -direction in a uniform magnetic field B=0.95 T . If electron density is 5.85xx10^(28)//m^(3) , then What is the value of hall emf ?

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