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When unpaired electron is trapped in ani...

When unpaired electron is trapped in anion vacancy, then crystal with such a defect is id to have

A

Schottky defect

B

F-centre

C

Frenkel defect

D

Non-Stoichiometric defect

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If hydrogen atoms (in the ground state ) are passed through an homogeneous magnetic field, the beam is split into two parts. This interaction with the magnetic field shows that the atoms must have magnetic moment. However, the moment cannot be due to the orbital angular momentum since l=0. Hence one must assume existence of intrinsic angular momentum, which as the experiment shows, has only two permitted orientations. Spin of the electron produce angular momentum equal to S=sqrt(s(s+1))(h)/(2pi) where S=+(1)/(2) . Total spin of an atom = +(n)/(2) " or "-(n)/(2) where n is the number of unpaired electrons. The substance which contain species with unpaired electrons in their orbitals behave as paramagnetic substances. The paramagnetism is expressed in terms of magnetic moment. The magnetic moment of an atom mu_(s)sqrt(s(s+1))(eh)/(2pimc)=sqrt((n)/(2)((n)/(2)+1))(eh)/(2pimc)" "s=(n)/(2) impliesmu_(s)=sqrt(n(n+1)) B.M. 1. B.M. (Bohr magneton)= (eh)/(4pimc) If magnetic moment is zero the substance is diamagnetic. If an ion of _(25)Mn has a magnetic moment of 3.873 B.M. Then oxidation state of Mn in ion is :

If hydrogen atoms (in the ground state ) are passed through an homogeneous magnetic field, the beam is split into two parts. This interaction with the magnetic field shows that the atoms must have magnetic moment. However, the moment cannot be due to the orbital angular momentum since l=0. Hence one must assume existence of intrinsic angular momentum, which as the experiment shows, has only two permitted orientations. Spin of the electron produce angular momentum equal to S=sqrt(s(s+1))(h)/(2pi) where S=+(1)/(2) . Total spin of an atom = +(n)/(2) " or "-(n)/(2) where n is the number of unpaired electrons. The substance which contain species with unpaired electrons in their orbitals behave as paramagnetic substances. The paramagnetism is expressed in terms of magnetic moment. The magnetic moment of an atom mu_(s)sqrt(s(s+1))(eh)/(2pimc)=sqrt((n)/(2)((n)/(2)+1))(eh)/(2pimc)" "s=(n)/(2) impliesmu_(s)=sqrt(n(n+1)) B.M. 1. B.M. (Bohr magneton)= (eh)/(4pimc) If magnetic moment is zero the substance is diamagnetic. Which of the following ion has lowest magnetic moment?

Interstitial compounds are formed when small atoms are trapped inside the crystal lattice of metals. Which of the following is not the characteristic property of interstitial compounds ?

The hexaquo manganese(II) ion contains five unpaired electrons, while the hexacyanoion contains only one unpaired electron. Explain using Crystal Field Theory.

Ionic lattic has two major points defects ,(1) Schottky (2) Frenkel defects . Schottkly defects occurs due to the cations - anion pair's missing from the lattice sites . Frenkel defects occurs when smaller ion leaves from its lattic site and fits into an intersitial space.which defect decrease density of the crystal ?

Doping mens introduction of small amount of impurities like phosphorus , arsenic or boron into the pure crystal . In pure silicon , ther are four valenices used in bonding with other four adjacent silicon crystal is doped with a group -15 element ( with five valence electron ) such as P, As , or Bi , the structure of the crystal lattic remains unchanged . Out of the five valence electron of group -15 doped element four element are used in normal covalent bonding with silicon while fiffth electron is delcoasiled and thus conducts electricity Doping a silicon crystal with a group -13 element (with three valence electrons ) such as B, Al, Ga or In products a semiconductor with three electrons in in dopant . The place where fourth electron is missing is called an electron vacancy or hole . Such hole can move throught the crystal like a positive charge giving rise conduction of electricity. No. of valene electrons in silicon are :

Doping mens introduction of small amount of impurities like phosphorus , arsenic or boron into the pure crystal . In pure silicon , ther are four valenices used in bonding with other four adjacent silicon crystal is doped with a group -15 element ( with five valence electron ) such as P, As , or Bi , the structure of the crystal lattic remains unchanged . Out of the five valence electron of group -15 doped element four element are used in normal covalent bonding with silicon while fiffth electron is delcoasiled and thus conducts electricity Doping a silicon crystal with a group -13 element (with three valence electrons ) such as B, Al, Ga or In products a semiconductor with three electrons in in dopant . The place where fourth electron is missing is called an electron vacancy or hole . Such hole can move throught the crystal like a positive charge giving rise conduction of electricity. Silicon that has been dopend with group - 15 elements is called :

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Drift velocity in a metallic conductor: At room temperature there are large number of free electrons having zero average velocity, but when electric field is applied, the free electrons start moving in a direction opposite to the direction of the applied field with a velocity called drift velocity. Mobility of free electron is

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MODERN PUBLICATION-SOLID STATE-EXERCISE
  1. Which of the following statements is correct in the body centred type ...

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  2. The device used for producing electric current is called:

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  3. When unpaired electron is trapped in anion vacancy, then crystal with ...

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  4. Which of the following is a molecular solid?

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  5. The empty space within hcp arrangement is

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  6. The number of tetrahedral voids per atom in a crystal lattice is………………...

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  7. The unit cell with parameter alpha=beta=gamma=90^(@) and a=b ne c is

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  8. What are the coordination number of Na^+ and Cl^- ions in NaCl?

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  9. Explain the Schottky defects in crystals.

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  10. Doping mens introduction of small amount of impurities like phosphor...

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  11. On doping germanium metal with a little of indium, one gets

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  12. The number of types of spaces lattices possible in a crystal are………………...

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  13. The number of tetrahedral voids per atom in a crystal lattice is………………...

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  14. Glass is…………………..type of solid.

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  15. Name the consituents of blood and state the functions of each.

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  16. What do you understand by the term space lattice and 'unit cell'?

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  17. Explain with the help of diagram the terms: angle of dip at a given pl...

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  18. Give important differences between crystalline and amorphous solids.

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  19. Why does white ZnO(s) becomes yellow upon heating?

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  20. CaCl2 will introduce Schottky defect when added to AgCl crystal. Expla...

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