Power p is to be delivered to device via transmission cables having resistance `R_C`. If V is the voltage across R and I is the current through it, find the power wasted and how it can be reduced.

In an a.c. circuit, with phase voltage V and current I, the power dissipated is

Assume that the silicon diode in the circui shown in fig. requires a minimum current of 1mA to be above the knee point (0.7V) of its I-V characteristics. Aslo assume that the voltage across the diode is independent of current above the knee point. What is the power dissipated in the resistance R and in the diode, when a current of 5mA flows in the circuit at V_(B)=6V ?

In a p-n junction diode, the current I can be expressed as I = I_0 exp ((eV)/(2k_BT)) where I_0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, k_B is the Boltzmann constant (8.6xx 10^-5 (eV)/K) and T is the absolute temperature. If for a given diode I_0 = 5 xx 10^-12 A and T = 300 K, then - What will be the increase in the current if the voltage across the diode is increased from 0.6 V to 0.7 V?

In a p-n junction diode, the current I can be expressed as I = I_0 exp ((eV)/(2k_BT)) where I_0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, k_B is th Boltzmann constant (8.6xx 10^-5 (eV)/K) and T is the absolute temperature. If for a given diode I_0 = 5 xx 10^-12 A and T = 300 K, then - What is the dynamic resistance when the voltage is increased to 0.7 V from 0.6 V?

In a p-n junction diode, the current I can be expressed as I = I_0 (exp ((eV)/(2k_BT))-1) where I_0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, k_B is th Boltzmann constant (8.6xx 10^-5 eV/K) and T is the absolute temperature. If for a given diode I_0 = 5 xx 10^ -12 A and T = 300 K, then - What will be the current if reverse bias voltage changes from 1 V to 2 V?

In a p-n junction diode, the current I can be expressed as I = I_0 (exp ((eV)/(2k_BT))-1) where I_0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, k_B is th Boltzmann constant (8.6xx 10^ -5 eV/K) and T is the absolute temperature. If for a given diode I_0 = 5 xx 10^ -12 A and T = 300 K, then - What will be the forward current at a forward voltage of 0.6 V?

Two identical cells, each of emf E, having negligible internal resistanc,e are connected in parallel with each other across the external resistance R. What is the current through this resistance?

An electric lamp,whose resistance is 20 Omega and a conductor of 4 Omega resistance are connected to a 6V battery as shown in the figure.calculate (a) total resistance of the circuit(b) the current through the circuit (c) the p.d.across the electric lamp and conductor.

4 resistance P= 5ohm, Q= 6 ohm,R=50 ohm & S= 60 ohm are connected in Four Arms of a wheatstone bridge. If a cell of EMF 1.5 v and negligible internal resistance is connected across the bridge, calculate he current in the arms of the Wheat stone bridge and the cell.