A doped semiconductor has impurity levels 40 MeV (millielectron volt) below the conduction band
Is the material n-type or p-type?

A doped semiconductor has impurity levels 40 MeV (millielectron volt) below the conduction band In a thermal collision,an amount of energy k T is given ot the extra electron loosely bound to the impurity ion and this electron is just able to jump into the conduction band.Calculate the temperature T. Given,Boltzmann's constant , k=8.62 xx 10^(-5) eV K^(-1) .

A p-type semiconductor has acceptor energy levels 57 meV(millielectron volt) above the valence band.Find the maximum wavelength of the radiation,which can create a hole?

The number of silicon atoms per m^3 is 5 xx 10^28 . This is doped simultaneously with 5 xx10^22 atoms per m^3 of Arsenic and 5xx 10^20 per m^3 atoms of Indium. Calculate the number of lectrons and holes. Given that n_i = 1.5xx 10^16 m . Is the material n-type or p-type?

How n-type semiconductor differ from p-type semiconductor ?

Distinguish between an intrinsic semiconductor and p-type semiconductor. Give reason, why a p-type semiconductor crystal is electrically neutral, although n_h>>n_e ?

A semiconductor has electron concentration of 4xx10^12 cm^-3 and hole concentration of 7xx10^-3 cm^-3 . Is the semiconductor n-type or p-type ?

An n-type semiconductor is the one which has excess of free electrons and p-type semiconductor is deficient in these. When a p-n junction is formed, the electrons should flow from n to p region. But all the electrons do not do so. Explain, why.