A doped semiconductor has impurity levels 40 MeV (millielectron volt) below the conduction band
In a thermal collision,an amount of energy k T is given ot the extra electron loosely bound to the impurity ion and this electron is just able to jump into the conduction band.Calculate the temperature T.
Given,Boltzmann's constant ,`k=8.62 xx 10^(-5) eV K^(-1)`.

A doped semiconductor has impurity levels 40 MeV (millielectron volt) below the conduction band Is the material n-type or p-type?

Estimate the fraction of electrons,which are excited from the energy gap of 1.1 eV at a temperature of 300 K. Given Boltzmann's constant, k=1.38 xx 10^(-23) J .

If the free electron density of copper is 8.6xx10^(28)m^(-3) and resistivity of copper at room temperature is 1.7xx10^(-6)Omega cm , find the relaxation time for the free electrons of copper. Given, mass of electron =9.1xx10^(-31) kg , and charge of electron =1.6xx10^(-19)C. Boltzmann's constant k = 1.38 xx 10^-23 J K^-1

In a p-n junction diode, the current I can be expressed as I = I_0 exp ((eV)/(2k_BT)) where I_0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, k_B is the Boltzmann constant (8.6xx 10^-5 (eV)/K) and T is the absolute temperature. If for a given diode I_0 = 5 xx 10^-12 A and T = 300 K, then - What will be the increase in the current if the voltage across the diode is increased from 0.6 V to 0.7 V?

In a p-n junction diode, the current I can be expressed as I = I_0 exp ((eV)/(2k_BT)) where I_0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, k_B is th Boltzmann constant (8.6xx 10^-5 (eV)/K) and T is the absolute temperature. If for a given diode I_0 = 5 xx 10^-12 A and T = 300 K, then - What is the dynamic resistance when the voltage is increased to 0.7 V from 0.6 V?

In a p-n junction diode, the current I can be expressed as I = I_0 (exp ((eV)/(2k_BT))-1) where I_0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, k_B is th Boltzmann constant (8.6xx 10^-5 eV/K) and T is the absolute temperature. If for a given diode I_0 = 5 xx 10^ -12 A and T = 300 K, then - What will be the current if reverse bias voltage changes from 1 V to 2 V?

In a p-n junction diode, the current I can be expressed as I = I_0 (exp ((eV)/(2k_BT))-1) where I_0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, k_B is th Boltzmann constant (8.6xx 10^ -5 eV/K) and T is the absolute temperature. If for a given diode I_0 = 5 xx 10^ -12 A and T = 300 K, then - What will be the forward current at a forward voltage of 0.6 V?

In an intrinsic semiconductor the energy gap E_g is 1.2eV . Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration ni is given by n_i= n_0 exp((E_g)/(2k_BT)) where n_0 is constant.