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The energy liberated in the ecombinatio...

The energy liberated in the ecombination of hole-electron pair is converted into electromagnetic radiation. If the maximum wave length emitted is 400 nm, find the value of forbidden energy gap.

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The energy liberated in the ecombination of hole-electron pair is converted into electromagnetic radiation. If the aximum wave length emitted is 600 nm, find the value of forbidden energy gap.

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MODERN PUBLICATION-Solids-EXERCISE
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  2. Using the concept of free electrons in a conductor, derive the express...

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  3. Energy band gap of gallium arsenide phosphate is 1.98 eV.Calculate the...

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  4. The enrgy gap of silicon is 1.14 eV.Find the maximum wavelength ,at wh...

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  5. The energy liberated in the combination of a hole-electron pair is con...

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  6. The energy liberated in the ecombination of hole-electron pair is con...

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  7. A p-type semiconductor has acceptor energy levels 57 meV(millielectron...

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  8. A semiconductor has accpetor level 1.57 eV above the valence band.What...

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  9. A semiconductor has equal electron and hole concentration of 4.2 xx 10...

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  10. A semiconductor has equal electron and hole concentration of 4.2 xx 10...

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  11. A semiconductor has equal electron and hole concentration 6xx10^8 m^(-...

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  12. A semiconductor has equal electron and hole concentration of 6 xx 10^8...

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  13. A semiconductor has equal electron and hole concentration of 6 xx 10^4...

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  14. A semiconductor has equal electron and hole concentration of 2 xx 10^8...

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  15. A semiconductor has equal electron and hole concentration of 6 xx 10^8...

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  16. A semiconductor has equal electron and hole concentration of 4.2 xx 10...

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  17. A semiconductor has electron concentration of 8 xx 10^8 m^(-3). and ho...

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  18. A semiconductor has the electration 0.45 xx 10^(20) m^(-3) and hole co...

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  19. Estimate the fraction of electrons,which are excited from the energy g...

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  20. In an intrinsic semiconductor the energy gap Eg is 1.2eV . Its hole mo...

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