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Assume that the silicon diode in the cir...

Assume that the silicon diode in the circui shown in fig. requires a minimum current of 1mA to be above the knee point (0.7V) of its I-V characteristics. Aslo assume that the voltage across the diode is independent of current above the knee point.
If `V_(B)=5`V, what should be the maximum value of R so that the voltage is above the knee point?

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Assume that the silicon diode in the circui shown in fig. requires a minimum current of 1mA to be above the knee point (0.7V) of its I-V characteristics. Aslo assume that the voltage across the diode is independent of current above the knee point. If V_(B)=5V , what should be the value of R to estabilish the current of 5mA in the circuit?

Assume that the silicon diode in the circui shown in fig. requires a minimum current of 1mA to be above the knee point (0.7V) of its I-V characteristics. Aslo assume that the voltage across the diode is independent of current above the knee point. If R=1kOmega , what is the minimum voltage V_(B) required to keep the diode above the knee point?

Assume that the silicon diode in the circui shown in fig. requires a minimum current of 1mA to be above the knee point (0.7V) of its I-V characteristics. Aslo assume that the voltage across the diode is independent of current above the knee point. What is the power dissipated in the resistance R and in the diode, when a current of 5mA flows in the circuit at V_(B)=6V ?

The diode used in the circuit shown in the adjacent figure has a constant voltage drop of 0.5V at all currents and a maximum power rating of 100mW.What should be the value of resistor R connected in series with the diode for obtaining maximum current?

An amplifier is represented by the circuit shown in Fig. Here r_(i) is the input resistance of the amplifier and the voltage V_(i) is appearing across it. This voltage is amplified by a factor A_(V) and appears across the load as voltage V_(0) An external voltage V_(s) is applied at the input terminals of the amplifier via series resistance R_(S). What will be the apparent gain A_(V)(=V_(0)//V_(s)) of the ampilifier in terms of A_(V), R_(S) and r_(i).

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Figure Shows a diode connected to an external resistance and an e.m.f. Assuming that the barrier potential developed in diode is 0.5 V, obtain the value of current in the circuit in milliampere.

Figure 3.33 shows a potentiometer with a cell of 2.0 V and internal resistance 0.40 Omega maintaining a potential drop across the resistor wire AB. A standard cell which maintains a constant emf of 1.02 V (for very moderate currents upto a few mA) gives a balance point at 67.3 cm length of the wire. To ensure very low currents drawn from the standard cell, a very high resistance of 600 k Omega is put in series with it, which is shorted close to the balance point. The standard cell is then replaced by a cell of unknown emf epsilon and the balance point found similarly, turns out to be at 82.3 cm length of the wire. Would the method work in the above situation if the driver cell of the potentiometer had an emf of 1.0V instead of 2.0V? :

Figure shows a potentiometer with a cell of 2.0 V and internal resistance 0.40 Omega maintaining a potential drop across the resistor wire AB. A standard cell which maintains a constant emf of 1.02 V (for very moderate currents upto a few mA) gives a balance point at 67.3 cm length of the wire. To ensure very low currents drawn from the standard cell, a very high resistance of 600 k Omega is put in series with it, which is shorted close to the balance point. The standard cell is then replaced by a cell of unknown emf epsilon and the balance point found similarly, turns out to be at 82.3 cm length of the wire. What is the value epsilon ? :

Figure 3.33 shows a potentiometer with a cell of 2.0 V and internal resistance 0.40 Omega maintaining a potential drop across the resistor wire AB. A standard cell which maintains a constant emf of 1.02 V (for very moderate currents upto a few mA) gives a balance point at 67.3 cm length of the wire. To ensure very low currents drawn from the standard cell, a very high resistance of 600 k Omega is put in series with it, which is shorted close to the balance point. The standard cell is then replaced by a cell of unknown emf epsilon and the balance point found similarly, turns out to be at 82.3 cm length of the wire. Is the balance point affected by the internal resistance of the driver cell?:

MODERN PUBLICATION-SEMICONDUCTOR DEVICES-EXERCISE
  1. Assume that the silicon diode in the circui shown in fig. requires a m...

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  2. Explain the two processes involved in the formation of a p-n junciton ...

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  3. Describe briefly, with the help of a diagram, the role of the two impo...

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  4. What do you mean by depletion region in a p-n junction ?

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  5. Explain the terms depletion layer and potential barrier for a junction...

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  6. Explain the terms depletion layer and potential barrier for a junction...

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  7. Explain the two processes involved in the formation of a p-n junciton ...

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  8. Explain forward bias and reverse bias of the junction diode.

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  9. Explain forward bias and reverse bias of the junction diode.

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  10. Explain forward bias and reverse bias of the junction diode.

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  11. With the help of circuit diagram, explain theV-l characteristics of p-...

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  12. Draw a circuit diagram with a p-n junction in forward bias.

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  13. With the help of circuit diagram, explain theV-l characteristics of p-...

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  14. Draw a circuit diagram with a p-n junction in forward bias.

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  15. Explain with the help of circuit diagram, how V-l characteristics of p...

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  16. With the help of circuit diagram, explain theV-l characteristics of p-...

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  17. Define the term dynamic resistance of a p-n junction diode.

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  18. Define Rectification. With the help a circuit diagram explain the work...

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  19. With the help of circuit diagram explain working of junction diode as ...

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  20. Draw the circuit diagram of a half wave rectifier using a junction dio...

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  21. Draw the circuit diagram of a half wave rectifier using a junction dio...

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