The following table provides the set of values, of V and I, obtained for a given diode. Assuming the characteristics to be nearly linear, over this range, calculate the forward and reverse bias resistance of the given diode.

In the given diagram, is the diode D forward or reverse biased?

In the given diagram, is the diode D forward or reverse biased?

In figure shows the V-I characteristics of semiconductor diode. Draw the circuit diagram to obtain the given characteristic of this device.

What is junction diode ? How is depletion layer formed ? Draw its forward and reverse bias characteristics by showing biasing of diodes ?

The following observed values of x and y are thought to satisfy a linear euations. Write the linear equations. Draw the graph using the values of x, y given in the above table At what points the graph of the linear equations: cuts the x-axis.

The following observed values of x and y are thought to satisfy a linear euations. Write the linear equations. Draw the graph using the values of x, y given in the above table At what points the graph of the linear equations: cuts the y-axis.

The question given below consist of an assertion (A) and a reason ( R). Use the following key to choose the appropriate answer to these questions from the codes (a), (b), ( c) and (d) given below: (a) Both A and R are true and R is the correct explanation of A. (b) Both A and R are true but R is NOT the correct explanation of A. (c) A is true but R is false. (d) A is false and R is also false. Assertion:The dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junction are drift in both forward and reverse bias. Reason: In reverse biasing no current flows through the junction.