A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

Three photo diodes D_1 , D_2 and D_3 are made of semiconductors having band gaps of 2.5 eV, 2eV and 3eV, respectively. Which ones will be able to detect light of wavelength 6000 oversetcircA ?

How n-type semiconductor differ from p-type semiconductor ?

The energy liberated in the combination of a hole-electron pair is converted into electromagnetic radiation.What is tha band gap,if the maximum wawveelngth fo th radiation emitted is 820 nm?Gien that 1 eV=1.6 xx 10^(-19) J and h=6.62 xx 10^(-34) Js .

In Young's doule slit experiment,the slits are 3 m from the screen.The width of the fringes observed with ilght of wavelength 6,000 overset @A is 2 mm.What is the separation of the slits?

In a double slit experiment the distance between the slits is 3 mm and the slits are 2 m away from the screen. Two interference patterns can be seen on the screen one due to light with wavelength 480 nm, and the other due to light with wavelength 600 nm. what is the separation on the screen between the fifth order bright frings of the two interference patterns?

Energy of the photon of sodium light of wavelength 5,890 overset @A equals the energy gap between valence and conduction band of a semiconductor. Find the minimum energy E required to create a hole-electron pair.