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Mobility of electrons in n -type Ge is 5...

Mobility of electrons in `n` -type Ge is `5000 cm^2V^-1 s^-1` and conductivity 5 mho/cm. If effect of holes is negligible, then impurity concentration is `k xx 10^(15) / cm^3`. Find `k`.

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Mobility of electrons in germanium of n -type and their conductivity are 3900 cm^-2 V^-1 s^-1 and 5 mho/cm , respectively. If effect of holes is negligible, then the concentration of impurity is n xx 10^(15) . Find n .

Mobilities of electrons and holes in a sample of a semiconductor is 25000 cm^(2) V^(-1) s^(-1) and 200 cm^(2) Vs respectively if the electron and hole concentration are 9 xx10^(13) per cm^(3) and 4xx10^(12) per cm^(3) respectively calculate the conductivity of the sample

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  • Mobility of electron in N-type Ge is 5000 cm^(2)//"volt" sec and conductivity 5 "mho/cm" . If effect of holes is negligible then impurity concentration will be

    A
    `6.25xx10^(15)//cm^(3)`
    B
    `9.25xx10^(14)//cm^(3)`
    C
    `6xx10^(13)//cm^(3)`
    D
    `9xx10^(13)//cm^(3)`

  • Mobility of electrons in Germanium of N types & their conductivity are 3900 cm^2 /volt-sec & 5 mho/cm respectively. If effect of holes are negligible then concentration of impurity will be-

    A
    `8 xx 10^15 // cm^3`
    B
    `9.25 xx 10^14 //cm^3`
    C
    `6 xx 10^13 // cm^3`
    D
    `9 xx 10^13 // cm^3`

  • The electron mobility in N -type germanium is 3900cm^(2)//v-s and its conductivity is 6.24 mho//cm , then impurity concentration will be if the effect of cotters is negligible

    A
    `10^(15) cm^(3)`
    B
    `10^(13) //cm^(3)`
    C
    `10^(12) //cm^(3)`
    D
    `10^(16) //cm^(3)`

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    On doping germanium with donor atoms of density 10^(17)cm^(-3) , find its conductivity if mobility of electrons is 3800 cm^(2)//V-s and intrinsic carrier concentration is 2.5xx10^(13)cm^(-3) . Also find the ratio of conductivity of doped germanium and pure germanium.

    (a) Find the conductivity of intrinsic silon at 300K . It is given that n_(i) at 300K in silicon is 1.5x10^(10)//cm ^(3) and the mobilities of electrons and holes in silicion are 1300cm^(2)//V-sec and 500 cm^(2)//V-sec respectively. (b) if donor type impurity is added to the extent of 1 impurity atom in 10^(8) sillicon atoms, find the conductivity. (c ) if acceptor inpurity is added to the extent of 1 impurity atom in 10^(8) silicon atoms,find the conductivuity. Given: number of atoms//m^(3) for Si=5xx10^(28)

    Mobilities of electrons and holes for an intrinsic silicon is 0.64m^(2)V^(-1)S^(-1) and 0.36 m^(2)V^(-1)s^(-1) respectively. If the electron and hole densities are equal to 1.6xx10^(19) m^(-3) . What is the conductivity of silicon ?

    Determine the number of density of donor atoms which have to be added to an intrisic germanium semiconductor to produce an n -type semiconductor of conductivity 5mho//cm . Given that the mobility of electrons in n -type semiconductor is 3850cm^(2)//volt-sec .

    A semiconductor is known to have an electron concentric of 8xx10^(13)//cm^(3) and hole concentration of 5xx10^(12)//cm^(3) . The semiconductor is

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