Mobility of electrons in germanium of `n` -type and their conductivity are `3900 cm^-2 V^-1 s^-1` and `5 mho/cm`, respectively. If effect of holes is negligible, then the concentration of impurity is `n xx 10^(15)`. Find `n`.

Mobility of electrons in Germanium of N types & their conductivity are 3900 cm^2 /volt-sec & 5 mho/cm respectively. If effect of holes are negligible then concentration of impurity will be-

Mobility of electrons in n -type Ge is 5000 cm^2V^-1 s^-1 and conductivity 5 mho/cm. If effect of holes is negligible, then impurity concentration is k xx 10^(15) / cm^3 . Find k .

Mobility of electron in N-type Ge is 5000 cm^(2)//"volt" sec and conductivity 5 "mho/cm" . If effect of holes is negligible then impurity concentration will be

Mobilities of electrons and holes in a sample of a semiconductor is 25000 cm^(2) V^(-1) s^(-1) and 200 cm^(2) Vs respectively if the electron and hole concentration are 9 xx10^(13) per cm^(3) and 4xx10^(12) per cm^(3) respectively calculate the conductivity of the sample

The electron mobility in N -type germanium is 3900cm^(2)//v-s and its conductivity is 6.24 mho//cm , then impurity concentration will be if the effect of cotters is negligible

(a) Find the conductivity of intrinsic silon at 300K . It is given that n_(i) at 300K in silicon is 1.5x10^(10)//cm ^(3) and the mobilities of electrons and holes in silicion are 1300cm^(2)//V-sec and 500 cm^(2)//V-sec respectively. (b) if donor type impurity is added to the extent of 1 impurity atom in 10^(8) sillicon atoms, find the conductivity. (c ) if acceptor inpurity is added to the extent of 1 impurity atom in 10^(8) silicon atoms,find the conductivuity. Given: number of atoms//m^(3) for Si=5xx10^(28)

Mobilities of electorns and holes in a sample of intrinsic germanium at room temperature are 0.54m^(2)V^(-1)s^(-1) and 0.18m^(2)V^(-1)s^(-1) respectively. If the electron and hole densities are equal to 3.6xx10^(19)m^(-3) calculate the germanium conductivity.

Determine the number density of donor atoms which have to be added to an intrinsic germanium to produce an n -type semiconductor of conductity 0.06Sm^(-1) . Given the mobility of electrons =0.39m^(2)V^(-1)s^(-1) . Neglect the contribution of holes to the conductivity.

Mobilities of electrons and holes for an intrinsic silicon is 0.64m^(2)V^(-1)S^(-1) and 0.36 m^(2)V^(-1)s^(-1) respectively. If the electron and hole densities are equal to 1.6xx10^(19) m^(-3) . What is the conductivity of silicon ?