A semiconductor has an intrinsic carrier concentration of `1.41 xx 10^(16) m^-3 `. When doped with `10^(21) m^-3` phosphorus, the concentration of holes at room temperature is `n xx` `10^(11) / m^3`. Find `n .`

If a semiconductor has an intrinsic carrier concentration of 1.41 xx 10^(16)//m^(3) when doped with 10^(21)//m^(3) at room temperature will be

A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6xx10^(16)m^(-3) . If the donor concentration level is 4.8xx10^(20) m^(-3) , then the concentration of holes in the semiconductor is

A semiconductor has equal electron and hole concentration of 2 xx 10^(8)m^(-3) . On doping with a certain impurity, the hole concertraction increases to 4 xx 10^(10)m^(-3) . (i) What type of semiconductor is obtained on doping? (ii) Calculate the new electron hole concentration of the semiconductor. (iii) How does the energy gap very with doping?

A semiconductor has equal electron and hole concentration of 6xx 10^(4)m^(-3) . On doping with a certain impurity, electron concentration increases to 8 xx 10^(12)m^(-3) . Identify the type of semiconductor.

A semiconductor is known to have an electron concentration of 5 xx 10^(13)//cm^(3) and hole concentration of 8 xx 10^(12)//cm^(3) . The semiconductor is

A semiconductor has equal electron and hole concentration of 2xx10^(8)m^(-3) . On doping with a certain impurity, the electron concentration increases to 4xx10^(10)m^(-3), then the new hole concentration of the semiconductor is