The drift current in a reverse-biased p-n junction increases in magnitude if the tempareture of the junction is increased. Explain this on the basis of creation of hole-electron pairs.

The drift current in a p-n junction is

In the middle of the depletion layer of reverse biased p-n junction, the

The diffusion current in a p-n junction is

In forward biasing of the p-n junction

Diffusion current in a p-n junction is greater than the drift current in magnitude

The drift current in a p-n junction is 20(mu)A. Estimate the number of electrons crossing a cross section per second in the depletion region.

In an unbiased p-n junction , holes diffuse from the p-region to n- region because

The reverse-biased current of a particular p-n junction diode increases when it is expoesed to light of wavelength less than or equal to 600nm.Assume that the increases in carrier concentration takes place due to the creation of new hole-electron pairs by the light.Find the band gap.