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Pure Si at 500K has equal number of elec...

Pure `Si` at `500K` has equal number of electron `(n_(e))` and hole `(n_(h))` concentration of `1.5xx10^(16)m^(-3)`. Dopping by indium. Increases `n_(h)` to `4.5xx10^(22) m^(-3)`. The doped semiconductor is of

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Pure Si at 500 K has equal number of electron (n_(e )) and hole (n_(h)) concentrations of 1.5xx10^(16)m^(-3) . Doping by indium increases n_(h) to 4.5xx10^(22)m^(-3) . The doped semiconductor is of ………

Pure Si at 500 K has equal number of electron ( n_(e)) and hole ( n_(h)) concentrations of 1.5 xx10^(16) "m"^(-3) . Doping by indium increases n_(h) to 4.5 xx10^(22) "m" ^(-3) . The doped semiconductor is of

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Pure Si at 300 K has equal electron (n_(e)) and hole (n_(h)) concentrations of 1.5xx10^(16)m^(-3) doping by indium increases n_(h) to 4.5xx10^(22)m^(-3) . Caculate n_(e) in the doped Si-

Pure Si at 300 K has equal electron (n_(e)) and hole (n_(h)) concentrastions of 1.5xx10^(16)m^(-3) doping by indium increases n_(h) to 4.5xx10^(22)m^(-3) . Caculate n_(theta) in the doped Si-

Pure Si at 300K has equal electron (n_(e)) and hole (n_(h)) concentrations of 1.5xx10^(16)m^(-3) Doping by indium increases n_(h) to 3xx10^(22)m^(-3) . Calculate n_(e) in the doped Si.