Find the number density of impurity atoms that must be added to a pure silicon crystal inorder to convert it to have resistivity
(i) `10^(-1)` `Omega`m n-type silicon
(ii) `10^(-1)``Omega`m p-type silicon.
Give for silicon: `mu_(e)`=0.135`m^(2)V^(-1)s^(-1)`
and `mu_(h)`=0.048`m^(2)V^(-1)s^(-1)`.

Explanation

To solve the problem of finding the number density of impurity atoms needed to convert pure silicon into n-type and p-type silicon with a resistivity of \(10^{-1} \, \Omega \, m\), we can follow these steps:

### Step 1: Understand the relationship between resistivity, conductivity, and charge carrier density
The conductivity (\(\sigma\)) of a semiconductor is given by the equation:
\[ \sigma = e \cdot \mu \cdot n \]
where:
...