How does the reverse saturation current in a P-N diode vary with temperature.

Suppose a 'n'- type wafer is created by doping Si crystal having 5xx10^(28) "atoms"//m^(3) with 1 ppm concentration of As. On the surfabe 200 ppm Boron is added to create 'p' region in this wafer. Considering n_(i)=1.5xx10^(16)m^(-3) , (i) Calculate the densities of the charge carriers in the n & p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.

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In a p-n junction diode, the currect I can expressed as I=I_(0) exp((eV)/(2k_(B)T)-1) where I_(0) is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, K_(B) is the Boltzmann constant (8.6 xx 10^(-5) eV//K) and T is the absolute temperature. If for a given diode I_(o) = 5 xx 10^(-12) A and T = 300 K , then (a) What will be the forward current at a formward voltage of 0.6V ? (b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V ? ( c) What is the dynamic resistance ? (d) What will be current if reverse bias voltage changes from 1 V to 2 V ?

Pickout the incorrect statement regarding reverse saturation current in the p-n junction diode.

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