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Can we take one slab of p-type semicondu...

Can we take one slab of p-type semiconductor and physically join it to another n-type semiconductor to get p-n junction?

A

Continuous contact at the atomic level is not possible

B

The junction behaves as a discontinuity for the flow

C

The roughness is much larger than interatomic crystal spacing

D

All the above

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The correct Answer is:
D
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (P-N JUNCTION DIODE)
  1. The potential barrier at a P-n junction is due to the charges on eithe...

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  2. In an unbiased p-n junction, holes diffuse from the p-region ton-regio...

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  3. Can we take one slab of p-type semiconductor and physically join it to...

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  4. In a P-N junction diode which is not connected to any circuit-

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  5. The electrical resistance of depletion layer is large because

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  6. In a PN junction

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  7. The barrier potentials for silicon and Germanium diodes are about

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  8. The dominant mechanism for motion of charge carriers in forward and re...

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  9. Potential barrier developed in a junction diode opposes the flow of

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  10. The correct curve between potential and distance near P-N junction is

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  11. When p-n junction diode is forward biased, then

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  12. Which of following statement is not correct ?

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  13. The resistance of an ideal diode in forward biased condition is

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  14. The resistance of an ideal diode in reverse biased condition is

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  15. In forward biased condition, the p-n junction diode behaves as

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  16. Reverse bias applied to a junction diode

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  17. In the middle of the depletion layer of a reverse-biased p - n junctio...

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  18. Avalanche breakdown in a semiconductor diode occurs when-

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  19. When a p-n junction diode is reverse biased the flow of current across...

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  20. The small currents in reverse biased condition of p-n diode are due to

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