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The electrical resistance of depletion l...

The electrical resistance of depletion layer is large because

A

It contains electrons as charge carriers

B

It contains holes as charge carriers

C

It has large number of charge carriers

D

It has no charge carriers

Text Solution

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The correct Answer is:
D
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (P-N JUNCTION DIODE)
  1. Can we take one slab of p-type semiconductor and physically join it to...

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  2. In a P-N junction diode which is not connected to any circuit-

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  3. The electrical resistance of depletion layer is large because

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  4. In a PN junction

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  5. The barrier potentials for silicon and Germanium diodes are about

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  6. The dominant mechanism for motion of charge carriers in forward and re...

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  7. Potential barrier developed in a junction diode opposes the flow of

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  8. The correct curve between potential and distance near P-N junction is

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  9. When p-n junction diode is forward biased, then

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  10. Which of following statement is not correct ?

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  11. The resistance of an ideal diode in forward biased condition is

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  12. The resistance of an ideal diode in reverse biased condition is

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  13. In forward biased condition, the p-n junction diode behaves as

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  14. Reverse bias applied to a junction diode

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  15. In the middle of the depletion layer of a reverse-biased p - n junctio...

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  16. Avalanche breakdown in a semiconductor diode occurs when-

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  17. When a p-n junction diode is reverse biased the flow of current across...

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  18. The small currents in reverse biased condition of p-n diode are due to

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  19. A p-n junction diode can be used as

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  20. In half-wave rectifier, maximum percentage of A.C. power that can be c...

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