Home
Class 12
PHYSICS
In a PN junction...

In a PN junction

A

high potential at N side and low potential at P side

B

high potential at P side and low potential at N side

C

P and N both are at same potential

D

undetermined

Text Solution

AI Generated Solution

The correct Answer is:
To solve the question regarding the potential in a PN junction, we will analyze the characteristics of a PN junction diode step by step. ### Step-by-Step Solution: 1. **Understanding the PN Junction**: - A PN junction is formed when p-type and n-type semiconductors are joined together. The p-type semiconductor has an abundance of holes (positive charge carriers), while the n-type semiconductor has an abundance of electrons (negative charge carriers). 2. **Formation of the Junction**: - When the p-type and n-type materials are brought into contact, electrons from the n-type region will diffuse into the p-type region where there are holes. This process leads to recombination, where electrons fill the holes, creating a depletion region at the junction. 3. **Charge Carrier Movement**: - As electrons move from the n-side to the p-side, they leave behind positively charged ions in the n-region. Conversely, the p-side will have negatively charged ions due to the absence of holes. This creates an electric field across the junction. 4. **Establishing Potential**: - The electric field generated by the ion charges creates a potential difference across the junction. The side with the positive ions (n-side) will have a higher potential, while the side with the negative ions (p-side) will have a lower potential. 5. **Conclusion**: - Therefore, in a PN junction, the high potential is at the n-side and the low potential is at the p-side. This leads us to conclude that the correct answer to the question is: - **High potential is at the n-side and low potential is at the p-side.** ### Final Answer: - The correct option is: **High potential is at n side and low potential is at p side.**
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE -I (TRANSISTORS)|22 Videos
  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE -I (LOGIC GATES)|17 Videos
  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )|41 Videos
  • RAY OPTICS

    AAKASH SERIES|Exercise PROBLEMS ( LEVEL-II)|60 Videos
  • UNITS AND MEASUREMENT

    AAKASH SERIES|Exercise PRACTICE EXERCISE|45 Videos

Similar Questions

Explore conceptually related problems

The contact potential at the junction site in a P-N junction is-

Depletion layer has (for an unbiased PN junction) -

The current through an ideal PN -junction shown in the following circuit diagram will be

For the given circuit of PN -junction diode, which of the following statements is correct?

Which of the following current must be zero in an unbiased PN junction diode ?

In the case of forward biasing of PN -junction, which one of the following figures correctly depicts the direction of flow of carriers?

In the following circuit of PN junction diodes D_(1),D_(2) and D_(3) are ideal then i is

When a silicon PN junction is in forwards biased condition with series resistance, it has knee voltage of 0.6 V . Current flow in it is 5 mA , when PN junction is connected with 2.6 V battery, the value of series resistance is

In a p-n junction,a potential barrier of 250 mev exsists across the junction.A hole with a kimetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a)from the p-side and (b)from the n-side.

When a p-n junction diode is reverse biased the flow of current across the junction is mainly due to

AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (P-N JUNCTION DIODE)
  1. In a P-N junction diode which is not connected to any circuit-

    Text Solution

    |

  2. The electrical resistance of depletion layer is large because

    Text Solution

    |

  3. In a PN junction

    Text Solution

    |

  4. The barrier potentials for silicon and Germanium diodes are about

    Text Solution

    |

  5. The dominant mechanism for motion of charge carriers in forward and re...

    Text Solution

    |

  6. Potential barrier developed in a junction diode opposes the flow of

    Text Solution

    |

  7. The correct curve between potential and distance near P-N junction is

    Text Solution

    |

  8. When p-n junction diode is forward biased, then

    Text Solution

    |

  9. Which of following statement is not correct ?

    Text Solution

    |

  10. The resistance of an ideal diode in forward biased condition is

    Text Solution

    |

  11. The resistance of an ideal diode in reverse biased condition is

    Text Solution

    |

  12. In forward biased condition, the p-n junction diode behaves as

    Text Solution

    |

  13. Reverse bias applied to a junction diode

    Text Solution

    |

  14. In the middle of the depletion layer of a reverse-biased p - n junctio...

    Text Solution

    |

  15. Avalanche breakdown in a semiconductor diode occurs when-

    Text Solution

    |

  16. When a p-n junction diode is reverse biased the flow of current across...

    Text Solution

    |

  17. The small currents in reverse biased condition of p-n diode are due to

    Text Solution

    |

  18. A p-n junction diode can be used as

    Text Solution

    |

  19. In half-wave rectifier, maximum percentage of A.C. power that can be c...

    Text Solution

    |

  20. The maximum efficiency of full wave rectifier is

    Text Solution

    |