The barrier potentials for silicon and G...

The barrier potentials for silicon and Germanium diodes are about

0.7V , 0.3V

0.2V, 0.3 volts

1.1V, 0.7V

1.1V , 0.3V

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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (P-N JUNCTION DIODE)

The electrical resistance of depletion layer is large because
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In a PN junction
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The barrier potentials for silicon and Germanium diodes are about
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The dominant mechanism for motion of charge carriers in forward and re...
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Potential barrier developed in a junction diode opposes the flow of
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The correct curve between potential and distance near P-N junction is
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When p-n junction diode is forward biased, then
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Which of following statement is not correct ?
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The resistance of an ideal diode in forward biased condition is
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The resistance of an ideal diode in reverse biased condition is
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In forward biased condition, the p-n junction diode behaves as
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Reverse bias applied to a junction diode
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In the middle of the depletion layer of a reverse-biased p - n junctio...
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Avalanche breakdown in a semiconductor diode occurs when-
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When a p-n junction diode is reverse biased the flow of current across...
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The small currents in reverse biased condition of p-n diode are due to
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A p-n junction diode can be used as
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In half-wave rectifier, maximum percentage of A.C. power that can be c...
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The maximum efficiency of full wave rectifier is
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