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Potential barrier developed in a junctio...

Potential barrier developed in a junction diode opposes the flow of

A

free electrons from n-region

B

holes from P-region

C

majority carriers from both the regions

D

minority carriers from both regions

Text Solution

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The correct Answer is:
C
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (P-N JUNCTION DIODE)
  1. The barrier potentials for silicon and Germanium diodes are about

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  2. The dominant mechanism for motion of charge carriers in forward and re...

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  3. Potential barrier developed in a junction diode opposes the flow of

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  4. The correct curve between potential and distance near P-N junction is

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  5. When p-n junction diode is forward biased, then

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  6. Which of following statement is not correct ?

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  7. The resistance of an ideal diode in forward biased condition is

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  8. The resistance of an ideal diode in reverse biased condition is

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  9. In forward biased condition, the p-n junction diode behaves as

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  10. Reverse bias applied to a junction diode

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  11. In the middle of the depletion layer of a reverse-biased p - n junctio...

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  12. Avalanche breakdown in a semiconductor diode occurs when-

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  13. When a p-n junction diode is reverse biased the flow of current across...

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  14. The small currents in reverse biased condition of p-n diode are due to

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  15. A p-n junction diode can be used as

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  16. In half-wave rectifier, maximum percentage of A.C. power that can be c...

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  17. The maximum efficiency of full wave rectifier is

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  18. Which of the following does not have a medusa stage?

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  19. The zener diode can be used as

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  20. In an unbiased p-n junction, holes diffuse from the P-region to n-regi...

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