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Avalanche breakdown in a semiconductor d...

Avalanche breakdown in a semiconductor diode occurs when-

A

forward current exceeds a certain value

B

reverse bias voltage exceeds a certain value

C

forward bias voltage exceeds a certain value

D

the potential barrier is reduced to zero

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The correct Answer is:
B
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (P-N JUNCTION DIODE)
  1. The correct curve between potential and distance near P-N junction is

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  2. When p-n junction diode is forward biased, then

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  3. Which of following statement is not correct ?

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  4. The resistance of an ideal diode in forward biased condition is

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  5. The resistance of an ideal diode in reverse biased condition is

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  6. In forward biased condition, the p-n junction diode behaves as

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  7. Reverse bias applied to a junction diode

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  8. In the middle of the depletion layer of a reverse-biased p - n junctio...

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  9. Avalanche breakdown in a semiconductor diode occurs when-

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  10. When a p-n junction diode is reverse biased the flow of current across...

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  11. The small currents in reverse biased condition of p-n diode are due to

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  12. A p-n junction diode can be used as

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  13. In half-wave rectifier, maximum percentage of A.C. power that can be c...

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  14. The maximum efficiency of full wave rectifier is

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  15. Which of the following does not have a medusa stage?

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  16. The zener diode can be used as

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  17. In an unbiased p-n junction, holes diffuse from the P-region to n-regi...

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  18. The I - V characteristic of an LED is

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  19. In figure, assuming the diodes to be ideal,

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  20. The value of the resistor , Rs needed in the DC voltage regulator circ...

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