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The width of forbidden gap in silicon cr...

The width of forbidden gap in silicon crystal is 1.1eV. When the crystal is converted into P-type semiconductor, then the distance of fermi energy level from valance band is

A

equal to 0.55eV

B

equal to 1.1eV

C

less than 0.55e V

D

greater than 0.55eV

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The correct Answer is:
C
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AAKASH SERIES-SEMICONDUCTOR DEVICES-PRACTICE EXERCISE (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )
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  2. The concentration of electrons in a semiconductor is 3 xx 10^(13)//cm^...

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  3. The width of forbidden gap in silicon crystal is 1.1eV. When the cryst...

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  4. A potential barrier of 0.5V exists across a pn junction diode. If the ...

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  5. An intrinsic semi conductor has 10^(18) //m^3 free electron and is dop...

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  6. If a semi conductor has an intrinsic carrier concentration of 1.41 xx ...

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  7. Which of the following diodes are forward biased ?

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  8. Which of the following diodes are forward biased ?

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  9. The junction diode shown in the figure is ideal. The current in the ci...

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  10. The current from below circuit if forward resistance of the diode is 5...

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  11. The diagram correctly represent the direction of flow of charge carrie...

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  12. The barrier potential in an ideal P-n junction diode is 0.3 volts. The...

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  13. The diode used in figure requires minimum current of ImA to be above t...

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  14. Calculate the value of R, if the maximum value of forward current of t...

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  15. The potential barrier existing across an unbiased p-n junction is 0.2 ...

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  16. In a p-n junction, a potential barrier of 250 meV exists across the ju...

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  17. Calculate the current through the circuit and the potential difference...

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  18. Find the currents through the resistances in the circuits shown in fig...

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  19. Find the currents through the resistances in the circuits shown in fig...

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  20. A potential barrier V volts exists across a P-N junction. The thicknes...

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