An electric field us applied to a semico...

An electric field us applied to a semiconductor.Let the number of charge carriers be n and the average drift speed be v.If the temperature is increased,

both n and v will increase

n will increase but v will decrease

v will increase but n will decrease

both n and v will decrease

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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE - IA

The energy gap for an insulator may be
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In case of a semi conductor, which one of the following statements is ...
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An electric field us applied to a semiconductor.Let the number of char...
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Lets npand ne be the number of holes and conduction electrons in an in...
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When an impurity is doped into an intrinsic semiconductor, the conduct...
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Diffusion current in a p-n junction is greater than the drift current ...
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In an intrinsic semiconductor, the fermi energy level lies
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The mobility of free electron is greater than that of free holes becau...
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The value indicated by fermi-energy level in an intrinsic semiconducto...
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A semiconducting device is connected in a series in circuit with a bat...
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Pure semiconductor is known as
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A doped semiconductor is
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The potential barrier, in the depletion layer , is due to
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A P-type semiconductor can be formed by doping Si or Ge with
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In an n-type semiconductor, the fermi energy level lies
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The band diagrams of three semiconductors are given in the figure. Fro...
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The element that can be used as an acceptor impurity to doped silicon ...
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In extrinsic semiconductors
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The potential barrier at a P-n junction is due to the charges on eithe...
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