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Lets npand ne be the number of holes and...

Lets `n_p`and `n_e` be the number of holes and conduction electrons in an intrinsic semiconductor.

A

`n_(p) gt n_(e)`

B

`n_(p)=n_(e)`

C

`n_(p) lt n_(e)`

D

`n_(p) ne n_(e)`

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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE - IA
  1. In case of a semi conductor, which one of the following statements is ...

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  2. An electric field us applied to a semiconductor.Let the number of char...

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  3. Lets npand ne be the number of holes and conduction electrons in an in...

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  4. When an impurity is doped into an intrinsic semiconductor, the conduct...

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  5. Diffusion current in a p-n junction is greater than the drift current ...

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  6. In an intrinsic semiconductor, the fermi energy level lies

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  7. The mobility of free electron is greater than that of free holes becau...

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  8. The value indicated by fermi-energy level in an intrinsic semiconducto...

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  9. A semiconducting device is connected in a series in circuit with a bat...

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  10. Pure semiconductor is known as

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  11. A doped semiconductor is

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  12. The potential barrier, in the depletion layer , is due to

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  13. A P-type semiconductor can be formed by doping Si or Ge with

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  14. An-type and P-type silicon can be obtained by doping pure silicon with

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  15. In an n-type semiconductor, the fermi energy level lies

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  16. The band diagrams of three semiconductors are given in the figure. Fro...

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  17. The element that can be used as an acceptor impurity to doped silicon ...

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  18. In extrinsic semiconductors

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  19. The potential barrier at a P-n junction is due to the charges on eithe...

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  20. If the two ends of a p-n junction are joined by a wire .

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