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Diffusion current in a p-n junction is g...

Diffusion current in a p-n junction is greater than the drift current in magnitude

A

if the junction is forward - biased

B

if the junction is reverse - biased

C

if the junction is unbiased

D

in no case

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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE - IA
  1. Lets npand ne be the number of holes and conduction electrons in an in...

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  2. When an impurity is doped into an intrinsic semiconductor, the conduct...

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  3. Diffusion current in a p-n junction is greater than the drift current ...

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  4. In an intrinsic semiconductor, the fermi energy level lies

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  5. The mobility of free electron is greater than that of free holes becau...

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  6. The value indicated by fermi-energy level in an intrinsic semiconducto...

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  7. A semiconducting device is connected in a series in circuit with a bat...

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  8. Pure semiconductor is known as

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  9. A doped semiconductor is

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  10. The potential barrier, in the depletion layer , is due to

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  11. A P-type semiconductor can be formed by doping Si or Ge with

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  12. An-type and P-type silicon can be obtained by doping pure silicon with

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  13. In an n-type semiconductor, the fermi energy level lies

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  14. The band diagrams of three semiconductors are given in the figure. Fro...

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  15. The element that can be used as an acceptor impurity to doped silicon ...

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  16. In extrinsic semiconductors

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  17. The potential barrier at a P-n junction is due to the charges on eithe...

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  18. If the two ends of a p-n junction are joined by a wire .

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  19. The drift current in a p-n junction is

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  20. The diffusion current in a p-n junction is

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