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The mobility of free electron is greater...

The mobility of free electron is greater than that of free holes because they

A

are lighter

B

have negative charge

C

need less additional energy to move

D

experience collisions less frequently

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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE - IA
  1. Diffusion current in a p-n junction is greater than the drift current ...

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  2. In an intrinsic semiconductor, the fermi energy level lies

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  3. The mobility of free electron is greater than that of free holes becau...

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  4. The value indicated by fermi-energy level in an intrinsic semiconducto...

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  5. A semiconducting device is connected in a series in circuit with a bat...

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  6. Pure semiconductor is known as

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  7. A doped semiconductor is

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  8. The potential barrier, in the depletion layer , is due to

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  9. A P-type semiconductor can be formed by doping Si or Ge with

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  10. An-type and P-type silicon can be obtained by doping pure silicon with

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  11. In an n-type semiconductor, the fermi energy level lies

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  12. The band diagrams of three semiconductors are given in the figure. Fro...

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  13. The element that can be used as an acceptor impurity to doped silicon ...

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  14. In extrinsic semiconductors

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  15. The potential barrier at a P-n junction is due to the charges on eithe...

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  16. If the two ends of a p-n junction are joined by a wire .

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  17. The drift current in a p-n junction is

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  18. The diffusion current in a p-n junction is

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  19. The electrical resistance of depletion layer is large because

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  20. In a P-N junction diode which is not connected to any circuit-

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