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The potential barrier, in the depletion ...

The potential barrier, in the depletion layer , is due to

A

Electrons

B

Holes

C

Ions

D

Forbidden Band

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In p-n junction diode, near junction holes combine with electrons, and impurity ions form a barrier potential which opposes the recombination of electron-hole pairs. Value of barriers potential for Si is 0.7 volt and for Ge is 0.3 V. thus charge density at the junction becomes zero and an electric field is produced near junction. this region is called depletion layer. Thickness of depletion layer is of the order of 10^(-6) meter. in forward bias p terminal is connected with the positive terminal of cell and n is connected with negative terminal of cell and n is connected with negative terminal of cell. as forward voltage is increased, current increases exponentially. As forward voltage is increased barrier potential in p-n junction diode is A. increased B. Decreased C. remain same D. nothing can be said.

The cause of the potential barrier in a p-n diode is:

AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE - IA
  1. Pure semiconductor is known as

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  2. A doped semiconductor is

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  3. The potential barrier, in the depletion layer , is due to

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  4. A P-type semiconductor can be formed by doping Si or Ge with

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  5. An-type and P-type silicon can be obtained by doping pure silicon with

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  6. In an n-type semiconductor, the fermi energy level lies

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  7. The band diagrams of three semiconductors are given in the figure. Fro...

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  8. The element that can be used as an acceptor impurity to doped silicon ...

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  9. In extrinsic semiconductors

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  10. The potential barrier at a P-n junction is due to the charges on eithe...

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  11. If the two ends of a p-n junction are joined by a wire .

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  12. The drift current in a p-n junction is

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  13. The diffusion current in a p-n junction is

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  14. The electrical resistance of depletion layer is large because

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  15. In a P-N junction diode which is not connected to any circuit-

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  16. The dominant mechanism for motion of charge carriers in forward and re...

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  17. The correct curve between potential and distance near P-N junction is

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  18. Potential barrier developed in a junction diode opposes the flow of

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  19. When p-n junction diode is forward biased, then

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  20. In the middle of the depletion layer of a reverse-biased p - n junctio...

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