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In an n-type semiconductor, the fermi en...

In an n-type semiconductor, the fermi energy level lies

A

in the forbidden energy gap nearer to the conduction band

B

in the forbidden energy gap nearer to the valence band

C

in the middle of forbidden energy gap

D

outside the forbidden energy gap

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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE - IA
  1. A P-type semiconductor can be formed by doping Si or Ge with

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  2. An-type and P-type silicon can be obtained by doping pure silicon with

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  3. In an n-type semiconductor, the fermi energy level lies

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  4. The band diagrams of three semiconductors are given in the figure. Fro...

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  5. The element that can be used as an acceptor impurity to doped silicon ...

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  6. In extrinsic semiconductors

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  7. The potential barrier at a P-n junction is due to the charges on eithe...

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  8. If the two ends of a p-n junction are joined by a wire .

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  9. The drift current in a p-n junction is

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  10. The diffusion current in a p-n junction is

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  11. The electrical resistance of depletion layer is large because

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  12. In a P-N junction diode which is not connected to any circuit-

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  13. The dominant mechanism for motion of charge carriers in forward and re...

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  14. The correct curve between potential and distance near P-N junction is

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  15. Potential barrier developed in a junction diode opposes the flow of

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  16. When p-n junction diode is forward biased, then

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  17. In the middle of the depletion layer of a reverse-biased p - n junctio...

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  18. Avalanche breakdown in a semiconductor diode occurs when-

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  19. When a p-n junction diode is reverse biased the flow of current across...

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  20. The small currents in reverse biased condition of p-n diode are due to

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