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In extrinsic semiconductors...

In extrinsic semiconductors

A

The conduction Band and Valence Band overlap

B

The gap between Conduction Band and Valence Band is more than 16eV

C

The gap between C.B. and V.B. is nearly about 1eV

D

The gap between C.B. and V.B. will be 100eV and more

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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE - IA
  1. The band diagrams of three semiconductors are given in the figure. Fro...

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  2. The element that can be used as an acceptor impurity to doped silicon ...

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  3. In extrinsic semiconductors

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  4. The potential barrier at a P-n junction is due to the charges on eithe...

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  5. If the two ends of a p-n junction are joined by a wire .

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  6. The drift current in a p-n junction is

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  7. The diffusion current in a p-n junction is

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  8. The electrical resistance of depletion layer is large because

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  9. In a P-N junction diode which is not connected to any circuit-

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  10. The dominant mechanism for motion of charge carriers in forward and re...

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  11. The correct curve between potential and distance near P-N junction is

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  12. Potential barrier developed in a junction diode opposes the flow of

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  13. When p-n junction diode is forward biased, then

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  14. In the middle of the depletion layer of a reverse-biased p - n junctio...

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  15. Avalanche breakdown in a semiconductor diode occurs when-

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  16. When a p-n junction diode is reverse biased the flow of current across...

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  17. The small currents in reverse biased condition of p-n diode are due to

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  18. In a p-n junction diode, change in temperature due to heating

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  19. The zener diode can be used as

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  20. In an unbiased p-n junction, holes diffuse from the P-region to n-regi...

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