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The electrical resistance of depletion l...

The electrical resistance of depletion layer is large because

A

It contains electrons as charge carriers

B

It contains holes as charge carriers

C

It has large number of charge carriers

D

It has no charge carriers

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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE - IA
  1. The drift current in a p-n junction is

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  2. The diffusion current in a p-n junction is

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  3. The electrical resistance of depletion layer is large because

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  4. In a P-N junction diode which is not connected to any circuit-

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  5. The dominant mechanism for motion of charge carriers in forward and re...

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  6. The correct curve between potential and distance near P-N junction is

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  7. Potential barrier developed in a junction diode opposes the flow of

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  8. When p-n junction diode is forward biased, then

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  9. In the middle of the depletion layer of a reverse-biased p - n junctio...

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  10. Avalanche breakdown in a semiconductor diode occurs when-

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  11. When a p-n junction diode is reverse biased the flow of current across...

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  12. The small currents in reverse biased condition of p-n diode are due to

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  13. In a p-n junction diode, change in temperature due to heating

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  14. The zener diode can be used as

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  15. In an unbiased p-n junction, holes diffuse from the P-region to n-regi...

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  16. The I - V characteristic of an LED is

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  17. In figure, assuming the diodes to be ideal,

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  18. Transistor can be used as :-

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  19. A n-p-n transistor conducts when

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  20. When a n-p-n transistor is used as an amplifier, then

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