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In a P-N junction diode which is not con...

In a P-N junction diode which is not connected to any circuit-

A

the potential is the same everywhere

B

the p-type side is at a higher potential than the n-type side

C

there is an electric field at the junction directed from the n-type side to p-type side

D

there is an electric field at the junction directed from the p-type side to the n-type side

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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE - IA
  1. The diffusion current in a p-n junction is

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  2. The electrical resistance of depletion layer is large because

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  3. In a P-N junction diode which is not connected to any circuit-

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  4. The dominant mechanism for motion of charge carriers in forward and re...

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  5. The correct curve between potential and distance near P-N junction is

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  6. Potential barrier developed in a junction diode opposes the flow of

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  7. When p-n junction diode is forward biased, then

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  8. In the middle of the depletion layer of a reverse-biased p - n junctio...

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  9. Avalanche breakdown in a semiconductor diode occurs when-

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  10. When a p-n junction diode is reverse biased the flow of current across...

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  11. The small currents in reverse biased condition of p-n diode are due to

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  12. In a p-n junction diode, change in temperature due to heating

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  13. The zener diode can be used as

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  14. In an unbiased p-n junction, holes diffuse from the P-region to n-regi...

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  15. The I - V characteristic of an LED is

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  16. In figure, assuming the diodes to be ideal,

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  17. Transistor can be used as :-

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  18. A n-p-n transistor conducts when

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  19. When a n-p-n transistor is used as an amplifier, then

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  20. In a common base amplifier the phase difference the input signal volta...

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