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Potential barrier developed in a junctio...

Potential barrier developed in a junction diode opposes the flow of

A

free electrons from n-region

B

holes from P-region

C

majority carriers from both the regions

D

minority carriers from both regions

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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE - IA
  1. The dominant mechanism for motion of charge carriers in forward and re...

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  2. The correct curve between potential and distance near P-N junction is

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  3. Potential barrier developed in a junction diode opposes the flow of

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  4. When p-n junction diode is forward biased, then

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  5. In the middle of the depletion layer of a reverse-biased p - n junctio...

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  6. Avalanche breakdown in a semiconductor diode occurs when-

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  7. When a p-n junction diode is reverse biased the flow of current across...

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  8. The small currents in reverse biased condition of p-n diode are due to

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  9. In a p-n junction diode, change in temperature due to heating

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  10. The zener diode can be used as

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  11. In an unbiased p-n junction, holes diffuse from the P-region to n-regi...

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  12. The I - V characteristic of an LED is

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  13. In figure, assuming the diodes to be ideal,

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  14. Transistor can be used as :-

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  15. A n-p-n transistor conducts when

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  16. When a n-p-n transistor is used as an amplifier, then

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  17. In a common base amplifier the phase difference the input signal volta...

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  18. Transfer characteristic [output voltage (V(0)) vs input voltage (V(i))...

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  19. An AND gate

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  20. Digital circuits can be with the repetitive use of

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