Home
Class 12
PHYSICS
When phosphorus and antimony are mixed i...

When phosphorus and antimony are mixed in germanium, then

A

P-type semiconductor is formed

B

N-type semiconductor is formed

C

Both (a) and (b)

D

None of these

Text Solution

Verified by Experts

The correct Answer is:
B
As phosphorus and antimony are pentavalent impurity .
Promotional Banner

Topper's Solved these Questions

  • ELECTRONICS

    ERRORLESS|Exercise NCERT Based Questions (Semiconductor Diode)|49 Videos

  • ELECTRONICS

    ERRORLESS|Exercise NCERT Based Questions (Junction Transistor)|29 Videos

  • ELECTRON, PHOTON, PHOTOELECTRIC EFFECT & X -RAY

    ERRORLESS|Exercise ASSERTION & REASON|27 Videos

  • ELECTROSTATICS

    ERRORLESS|Exercise ASSERTION & REASON|25 Videos

Similar Questions

Explore conceptually related problems

The product of the hole concentration and the conduction electron concentration turns out to be independent of the amount of any impurity doped. The concentration of conduction electrons in germanium is 6xx10^19 per cubic per cubic metre.When some phosphorus impurity is doped into a germanium sample, the concentration of conduction electrons increases to 2xx10^28 per cubic metre.Find the concentration of the holes in the doped germanium.

Germanium diode.

When Arsenic atoms are added to Germanium lattice, it becomes a/an

When a phosphorus atom is converted to a phosphide ion, what happens to the number of unpaired electrons and the total number of electrons around the phosphorus?

Write phosphorus and Red phosphorus.

White phosphorus when reacts with nitric acid gives

ERRORLESS-ELECTRONICS-Assertion & Reason
  1. When phosphorus and antimony are mixed in germanium, then

    Text Solution

    |

  2. Assertion: The logic gate NOT can be built using diode. Reason: The ...

    Text Solution

    |

  3. Assertion: The number of electrons in a p-type silicon semiconductor i...

    Text Solution

    |

  4. Assertion : In a common emitter transistor amplifier, the input curren...

    Text Solution

    |

  5. Assertion : A transistor amplifier in common emitter configuration h...

    Text Solution

    |

  6. Assertion: When PN-junction is forward biased then motion of charge ca...

    Text Solution

    |

  7. Assertion: If the temperature of a semiconductor is increased then its...

    Text Solution

    |

  8. Statement-1 : The temperature coefficient of resistance is positive fo...

    Text Solution

    |

  9. Assertion: Electron has higher mobility than hole in a semiconductor. ...

    Text Solution

    |

  10. Assertion : An N-type semiconductor has a large number of electrons bu...

    Text Solution

    |

  11. Assertion : Light emitting diode (LED) emits spontaneous radiation. ...

    Text Solution

    |

  12. Assertion: Silicon is preferred over germanium for making semiconducto...

    Text Solution

    |

  13. Assertion: We can measure the potential barrier of a PN junction by pu...

    Text Solution

    |

  14. Assertion : The energy gap between the valence band and conduction ban...

    Text Solution

    |

  15. Assertion: Two P-N junction diodes placed back to back, will work as a...

    Text Solution

    |

  16. Assertion : In transistor common emitter mode as an amplifier is pre...

    Text Solution

    |

  17. Assertion:The dominant mechanism for motion of charge carriers in forw...

    Text Solution

    |

  18. Statement-I : A p-n junction with reverse bias can be used as a photod...

    Text Solution

    |

  19. Assertion: NAND or NOR gates are called digital building blocks. Rea...

    Text Solution

    |

  20. Assertion : In common base configuration, the current gain of the tran...

    Text Solution

    |

  21. Assertion : In the following circuit the potential drop across the res...

    Text Solution

    |