The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon `P-N` junction are

Options

A. Drift in forward bias, diffusion in reverse bias
B. Diffusion In forward bias, drift in reverse bias
C. Diffusion in both forward and reverse bias
D. Drift in both forward and reverse bias

Answer

B

Explanation

In forward biasing, current diffuses because charge carrier flow due to concentration gradient . In reverse biasing current drifts because charge carrier flow due to electric field .