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Consider the folllowing statements i and...

Consider the folllowing statements i and ii and identify the correct choice of the given answers.
A zener diode is always connected in reverse bias.
The potential barrier of a p-n junction lies between 0.03 to 0.1 V approximately.

A

A and B are correct

B

A and B are wrong

C

A is correct but B is wrong

D

A is wrong but B is correct

Text Solution

Verified by Experts

The correct Answer is:
C
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In Fig . V_(0) is the potential barrier across a p-n junction, when no battery is connected across the junction

In Fig. V_(0) is the potential barrier across a p-n junction, when no battery is connected across the junction : .

p-n junction is a semiconductor diode. It is obtained by bringing p-type semiconductor inclose contact with n-type semiconductor. A thin layer is developed at the p-n junction which is devoid of any charge carrier but has immobile ions. It is called depletion layer. At the junction a potential barrier appears, which does not allow the movement of majority charge carriers across the junction in the absence of any biasing of the junction. p-n junction offer low resistance when forward biased and high resistance when reverse biased. Read the above paragaph and answer the following question: (i) Can we measure the potential barrier of p-n junction by putting a sensitive voltmeter across its terminals? (ii) What practical lesson do you draw from the above study?

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