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In an unblased p-n junction, holes diffu...

In an unblased p-n junction, holes diffuse from the p - region to n- region because

A

Free electrons in the n-region attract them

B

They move across the junction by the potential difference

C

Hole concentration in p-region is more as compared ton-region

D

All of the above

Text Solution

Verified by Experts

The correct Answer is:
C
Hole diffuse from P to n and electron diffuse from n to P due to concentration gradient of charge carriers.
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ERRORLESS-ELECTRONICS-Past years questions
  1. On adjusting the P-N junction diode in forward biased

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  2. Application of a forward biase to a p-n junction:

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  3. In an unblased p-n junction, holes diffuse from the p - region to n- r...

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  4. The peak voltage in the output of a half-wave diode rectifier fed with...

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  5. In a p-n junction photo cell, the value of the photo electromotive for...

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  6. The given graph represents V-I characteristic for a semiconductor devi...

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  7. The cause of the potential barrier in a P-N diode is

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  8. Barrier potential of a p-n junction diode does not depend on

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  9. The barrier potential of a p-n junction depends on : (i) type of semic...

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  10. A light emitting diode (LED) has a voltage drop of 2V across it and pa...

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  11. Two ideal diodes are connected to a battery as shown in the circuit. T...

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  12. Consider the junction diode as ideal. The value of current flowing thr...

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  13. Current in the circuit will be

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  14. In the given figure, a diode D is connected to an external resistance ...

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  15. The given circuit has two ideal diodes connected as show in the figure...

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  16. Which one of the following represents forward bias diode?

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  17. For transistor action which of the following statement are correct (...

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  18. The minimum potential difference between the base and emitter required...

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  19. One way in which the operation of an npn transistor differ from that o...

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  20. In case of NPN-transistor the collector current is always less than th...

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