Home
Class 12
PHYSICS
Assertion : In common base configuration...

Assertion : In common base configuration, the current gain of the transistor is less than unity.
Reason : The collector terminal is revers biased for amplification.

A

If both assertion and reason are true and the reason is the correct explanation of the assertion.

B

If both assertion and reason are true but reason is not the correct explanation of the assertion.

C

If assertion is true but reason is false.

D

If the assertion and reason both are false.

Text Solution

Verified by Experts

The correct Answer is:
B
Current gain is less because `i_(c) lt i_(e)`.
Promotional Banner

Topper's Solved these Questions

  • ELECTRONICS

    ERRORLESS|Exercise Past years questions|73 Videos

  • ELECTRON, PHOTON, PHOTOELECTRIC EFFECT & X -RAY

    ERRORLESS|Exercise ASSERTION & REASON|27 Videos

  • ELECTROSTATICS

    ERRORLESS|Exercise ASSERTION & REASON|25 Videos

Similar Questions

Explore conceptually related problems

Consider an n-p-n transistor amplifer in common-emitter configuration. The current gain of the transistor is 100 . If the collector current changes by 1mA , what will be the change in emitter current?

For a transistor is common base configuration if beta is 100 , the value of current gain is is

Assertion : In a common emitter transistor amplifier, the input current is much less than output current. Reason : The common-emitter transistor amplifier has a very high input impedance.

For a transistor in common emitter configuration, the current amplification factor is 4 . If the transistor is connected in the common base connected and change in emitter current be 6 m A , then the collector current will be

Assertion : A transistor amplifier in common emitter configuration has a low input impedence. Reason : The base to emitter region is forward biased.

In a common base configuration, the transistor has emitter current of 10 mA and collector current of 9.8 mA. The value of base current is….

ERRORLESS-ELECTRONICS-Assertion & Reason
  1. Statement-1 : The temperature coefficient of resistance is positive fo...

    Text Solution

    |

  2. Assertion: Electron has higher mobility than hole in a semiconductor. ...

    Text Solution

    |

  3. Assertion : An N-type semiconductor has a large number of electrons bu...

    Text Solution

    |

  4. Assertion : Light emitting diode (LED) emits spontaneous radiation. ...

    Text Solution

    |

  5. Assertion: Silicon is preferred over germanium for making semiconducto...

    Text Solution

    |

  6. Assertion: We can measure the potential barrier of a PN junction by pu...

    Text Solution

    |

  7. Assertion : The energy gap between the valence band and conduction ban...

    Text Solution

    |

  8. Assertion: Two P-N junction diodes placed back to back, will work as a...

    Text Solution

    |

  9. Assertion : In transistor common emitter mode as an amplifier is pre...

    Text Solution

    |

  10. Assertion:The dominant mechanism for motion of charge carriers in forw...

    Text Solution

    |

  11. Statement-I : A p-n junction with reverse bias can be used as a photod...

    Text Solution

    |

  12. Assertion: NAND or NOR gates are called digital building blocks. Rea...

    Text Solution

    |

  13. Assertion : In common base configuration, the current gain of the tran...

    Text Solution

    |

  14. Assertion : In the following circuit the potential drop across the res...

    Text Solution

    |

  15. Assertion: The current gain in common base circuit is always less than...

    Text Solution

    |

  16. Assertion: V-i charcteristic of P-N junction diode is same as that of ...

    Text Solution

    |

  17. Assertion: Zener diode works on a principle of of breakdown voltage. ...

    Text Solution

    |

  18. Assertion: NOT gate is also called inverter circuit. Reason: NOT gat...

    Text Solution

    |

  19. Assertion: De Morgan's theoram bar(A+B)=bar(A).bar(B) may be explained...

    Text Solution

    |

  20. Assertion: A P-N photodiode is made from a semiconductor for which E(...

    Text Solution

    |