Draw the V-I characterisitics of p-n junction diode in forward bias and in reverse bias.

(a). Explains briefly with the help of a circuit diagram how V-I characteristics of a p-n junction diode are obtainedin (i) forward bias, and (ii) reverse bias. (b). A photo diode is fabricated from a semiconductor with a band gap of 2.8 EV. Can it detect wave length of 6000. nm? Justify.

Explain the working of p-n junction diode in forward and reverse biased mode.

In V-I characteristics of a p-n junction diode, why is the current under reverse bias almost independence of the applied potential upto a critical voltage?

Draw V-I characterictics of a p-n junction diode. Why does the reverse current show a sudden increase at the critical voltage? Name any semiconductor device which operates under the reverse bias in the breakdown region.

p-n junction in reverse bias behaves like

(a) Draw the V-I characteristic curve for forward and reverse bias of a p-n juction diode (b) what are th majority and ninority carriers in a p type semiconductor (c ) wirte down the symbol and truth table of OR gate