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silicon doped with electron rich imp...

silicon doped with electron rich impurity forms ………. .

A

p-type semiconductor

B

n-type semiconductor

C

Intrinsic semiconductor

D

Insulator

Text Solution

Verified by Experts

The correct Answer is:
B
Silicon doped with electron rich impurity such as phosphorus forms a n-type semiconductor. This is due to presence of mobile electron.
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ERRORLESS-SOLID STATE-NCERT BASED QUESTIONS (DEFECTS IN CRYSTAL)
  1. Some polar crystals when heated produce small electrical current. The ...

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  2. With Which one of the following elements silicon should be doped so as...

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  3. Schottky defect occurs mainly in electrovalent compounds where

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  4. Zine oxide is white but it turns yellow on heating . Explain.

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  5. Frenkel defect generally appears in

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  6. The following is not a function of an impurity present in a crystal:

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  7. Point defects are present in .

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  8. If a non-metal is added to the interstitial sites of a metal, then the...

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  9. In AgBr crystal , the ion size lies in the order Ag^(+) lt lt Br^(-) T...

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  10. Which one of the following is the most correct statement?

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  11. The flame colours of metal ions are due to

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  12. Which one of the following crystal does not exhibit Frenkel defect?

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  13. Which of the following defect is seen in FeO

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  14. To get a n- type semiconductor from silicon , it should be doped...

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  15. which kind of defects are introduced by doping ?

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  16. silicon doped with electron rich impurity forms ………. .

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  17. Pure silicon dopend with phosphorus is a

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  18. Te defect that is more likely to occur in almost all types of ionic cr...

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  19. Schottky defect in a crystal arises due to

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  20. The wrong statement about the interstitial compound is

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